The University of Illinois and its partners have used technology derived from printing to develop technologies that can produce a four-junction photovoltaic cell with a 1000-fold convergence efficiency of 43.9% with a high yield. Related papers have been published on the online version of the academic journal Nature Materials. The size of the unit is only 650μm (0.65mm) square, suitable for concentrating photovoltaic cells, and the conversion efficiency of the module with the concentrating system is 36.5%.
The research team that developed the technology is composed of Semprius, a manufacturer of concentrating photovoltaic systems in the United States, and Solar Junction, a manufacturer of multi-junction photovoltaic cells for this system, and researchers from China University of Mining and Technology.
The condenser lens module is installed. The lens is divided into two stages. The first lens is made up of about 2cm square lenses. The second lens (the bottom right image) is a 2mm diameter spherical lens. It achieves 1000 times by the combined effect of the two lenses. Spotlight.
The composition of each layer of the photovoltaic cell in this time is InGaP/GaAs/InGaAsNSb/Ge, and the range of wavelengths that can be used for power generation is very wide, covering the range of 300 nm to 1700 nm. Below to introduce the specific production process. First, an InGaP/GaAs/InGaAsNSb triple junction device was fabricated on a GaAs substrate. Then, the AlInP layer between the GaAs substrate and the photovoltaic cell is dissolved by etching, and the GaAs substrate is easily peeled off.
On the other hand, a GaAs layer is deposited and patterned on a Ge substrate on which a pn junction is formed. Then, a spin-coating method was used to apply an As2Se3 solution having a "paste" effect on the surface. Thickness is only 10nm.
Lastly, a silicon resin "PDMS (Dimethylpolysiloxane)" having a concave-convex surface is pressed against a GaAs substrate, a three-junction element on the surface thereof is transferred to PDMS, and then bonded to a GaAs/Ge substrate. In other processes, four-junction photovoltaic cells were produced.
The pioneer of four-junction photovoltaic cell is also made by bonding
The four-junction photovoltaic cell was developed by Fraunhofer ISE in 2013, with an efficiency of 44.7% (concentration of 297 times), and is the highest efficiency of multi-junction photovoltaic cells in the world. Fraunhofer ISE also used a wafer bonding method to bond a GaInP/GaAs element formed on a GaAs wafer with a GaInAsP/GaInAs element formed on an InP wafer to fabricate a four-junction photovoltaic cell.
Due to limitations in the conditions such as lattice constant and current integration, four-junction photovoltaic cells are difficult to form all the compound semiconductor layers by epitaxial growth. Therefore, adhesion may become a mainstream manufacturing method.
Incidentally, in 2013, Sharp developed a unit with a conversion efficiency of 44.4% (307 times the concentration of light) in terms of three-junction photovoltaic cells.
Although this 43.9% efficiency is not outstanding, it is unique in that some of its production processes use printing-originating techniques and spin-coating methods that are very similar to the seals, and the yield rate is as high as 95%.
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