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The low-energy electronic structure of SnSe single crystals measured by high-resolution angular-resolved photoelectron spectroscopy: the multi-peak energy band and linear dispersion similar to graphene, and on this basis can be understood from the micro-mechanism perspective and search for high thermoelectricity Value material "pudding" model
Recently, the Shen Dawei team of the State University of Science and Technology's Center for Excellence in Superconducting Electrospinning and the State Key Laboratory of Functional Materials of Shanghai Institute of Microsystem and Information Technology collaborated with Zheng Yi's team of researchers at the Department of Physics of Zhejiang University to use ultra-high resolution angular resolution photoelectron energy. Spectrum and cryogenic quantum transport measurement are two complementary technologies. For the first time, the fine electronic structure characterization of SnSe, the thermoelectric material with the highest record of excellent thermoelectric value, has been realized. The “defective engineering†has been successfully used to realize the electronic structure of the material. The effective regulation of thermoelectric properties provides the necessary basis for the further use of energy band engineering to synthesize and improve high-efficiency thermoelectric materials.
The study found that the low-energy electronic structure of SnSe combines a unique "multivalley" band with linear dispersion similar to graphene. The former can greatly enhance the Seebeck coefficient of the material, which leads to a decrease in the effective mass of the electrons in the material and thus an effective enhancement of the electrical conductivity of the material. The combination of the two leads to a great value of the thermoelectricity of the SnSe material. Enhanced. On this basis, this study proposes a "pudding-mould" model that can understand and find high-quality thermoelectric materials from the perspective of microcosmic mechanism. This is the first time that people understand the thermoelectric properties in SnSe from the perspective of electronic structure. In addition, through the human introduction of controllable SnSe2 impurity states and point dislocations, the effective control of carrier concentration in SnSe materials on the basis of maintaining the original basic physical properties has been realized, and “defect engineering†will be utilized for the future. “The synthesis and improvement of high-efficiency thermoelectric materials have opened up new theoretical directions and technological foundations.
The relevant research results were published in Nature-Communications. Wang Zhen, PhD Department of Physics, Zhejiang University and Fan Congcong, Ph.D., Shanghai Institute of Microsystems, were the first authors of the dissertation. Shen Dawei and Zheng Yi were co-authors. The study was funded by the national major research instrument development projects.
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