Breakthrough in the preparation of graphene single crystal on the surface of boron nitride

Researchers such as Tang Shujie, State Key Laboratory of Information Functional Materials, Shanghai Institute of Microsystems, Chinese Academy of Sciences, have introduced high-oriented rapid growth of graphene single crystals on hexagonal boron nitride surface for the first time in the world by introducing a gaseous catalyst. On March 11, relevant research papers were published in Nature Communication.

Based on the previous control of graphene nucleation control and determination of the orientation relationship between single crystal and substrate, the team used acetylene as a carbon source and innovatively introduced silane as a catalyst to prepare crystal domain size over chemical vapor phase epitaxy. The growth rate of 20 micron graphene single crystals is two orders of magnitude higher than that reported in the previous literature. More than 90% of graphene single crystals and boron nitride substrates are strictly oriented, presenting a two-dimensional superlattice caused by Murray stripes. The structure, the typical room temperature Hall mobility of the prepared graphene exceeds 20,000 square centimeters per volt second.

Graphene has excellent electrical properties, superior thermal conductivity and excellent mechanical properties, but its electrical properties are greatly affected by the substrate. Charge impurities and phonon scattering can greatly reduce the electrical properties of graphene. The direct growth of graphene single crystal by chemical vapor deposition on the surface of hexagonal boron nitride can avoid interface contamination and damage defects caused by physical transfer, and provide a material basis for its in-depth application in the field of integrated circuits. However, direct growth of graphene single crystals on dielectric surfaces such as hexagonal boron nitride has been a significant problem due to the lack of catalytic ability of the substrate.

The gas catalytic method proposed in this research has been patented, which can provide new ideas and technical solutions for preparing high quality graphene single crystal films on dielectric substrates. (Huang Xin)

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