Recently, Yu Xuefeng, a researcher at the Shenzhen Advanced Technology Research Institute of the Chinese Academy of Sciences, and senior engineer Huang Yifan cooperated to achieve new breakthroughs in the field of high-quality black phosphorene preparation. Published in the international chemical journal Chemical Communications. The first author of the paper is Huang Hao, an assistant researcher, and the co-first author is Dr. Kang Yihong. Collaborators include Professor Zhu Jianhao and Ricardo Ibarra, professor of the Aragon Nanoscience Institute in Spain.
As a direct band gap semiconductor two-dimensional layered material with adjustable band gap, black phosphorene has great application potential in the field of optoelectronics. At present, the main method of preparing black phosphorene is liquid shearing / ultrasonic peeling method, but black phosphorus itself has a small Young's modulus, and long-term shearing / ultrasonic will result in a smaller layer of phosphorene and more defects, and it is easy Oxidation occurs, thereby limiting the application of black phosphorene. Therefore, the development of an efficient method for preparing high-quality large-size black phosphorene is crucial for the application of black phosphorene. Unlike solids, liquids, and gases, plasma is composed of a collection of ions, electrons, and non-ionized neutral particles. The whole is in a neutral state of matter, and is known as the "fourth state of matter." As a green industrial technology, plasma technology has been widely used in material surface treatment, nano-material synthesis and semiconductor manufacturing. However, the technical route of using plasma technology to prepare black phosphorene has not been reported.
In the early stage, the team has done a lot of research on the preparation of liquid phase ultrasound (Advanced Functional Materials 25 (45), 6996-7002) and ion intercalation (Small Methods, 1900083; Materials Horizons 6 (1), 176-181) of phosphine jobs. In this work, based on years of experience in the preparation of black phosphorene and the characteristics of plasma technology, the team independently designed a plasma liquid phase preparation system, including power modules and reaction modules. A plasma is generated at the anode by a high-voltage power supply and acts on the N, N-dimethylformamide solvent. The active particles in the plasma decompose the N, N-dimethylformamide molecules, and the decomposition products drive the cathode black under the electric field. Phosphorus crystals intercalate, at the same time generate gas between the layers, weaken the interlayer force, so that the black phosphorus crystals expand rapidly, thereby efficiently preparing high-quality large-size black phosphorene. At the same time, due to the short preparation time, the phosphorene prepared by this method has a low degree of oxidation and exhibits excellent photoelectric response performance, which lays the foundation for the application of black phosphorene as a high-performance electronic material.
The above research has been supported by the National Natural Science Foundation of China, the Chinese Academy of Sciences frontier key projects, the Shenzhen Science and Technology Plan Project, etc.
Figure: a) Schematic diagram of plasma liquid phase stripping; b) black phosphorene white light microscope photo and dispersion liquid white light photo; c) black phosphorene transmission electron microscope image; d) black phosphorene high-resolution transmission electron microscope image.
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